Tc max
4.1 K
Tc ambient
4.1 K
arXiv year
2020
Papers
4
Tc exp.
4.1 K
Tc theo.
—
Evidence
experimental
Tc max measured at polycrystal, resistivity, DOI: 10.1103/k2t5-wcq1
Evidence (9 records from 4 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 4.1 | — | polycrystal | resistivity | — | 2025 | T1 | DOI: 10.1103/k2t5-wcq1 |
| 4.0 | — | polycrystal | susceptibility | — | 2025 | T1 | DOI: 10.1103/k2t5-wcq1 |
| 3.9 | ambient |
Structure
- Crystal structure
- orthorhombic TiFeSi type
- Space group
- I m a 2 (#46)
- Lattice a (Å)
- 7.132
- Lattice c (Å)
- 6.547
Superconducting parameters
- Gap structure
- multi_gap
- Hc2
- 3.2 T (0 K)
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- polycrystal