Tc max
4.7 K
Tc ambient
4.7 K
Discovery
1999
Papers
9
Tc max measured at ambient, thin_film, resistivity, arXiv:cond-mat/0403764, confirmed by 2 papers
Evidence (10 records from 9 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Paper |
|---|---|---|---|---|---|---|
| 5.5 | ambient | — | — | — | 2001 | cond-mat/0103352 |
| 4.7 | ambient | thin_film | resistivity | — | 2004 | cond-mat/0403764 |
| 4.6 | ambient | thin_film | resistivity | — | 2000 | cond-mat/0003148 |
| 4.6 | ambient | thin_film | resistivity | — | 1999 | cond-mat/9903060 |
| 4.6 | ambient | thin_film | resistivity | — | 1999 | cond-mat/9906330 |
| 0.6 | ambient | thin_film | resistivity | — | 2003 | cond-mat/0309281 |
| — | ambient | thin_film | resistivity | — | 2003 | cond-mat/0309281 |
| — | ambient | thin_film | resistivity | — | 2002 | cond-mat/0208126 |
| — | ambient | thin_film | resistivity | — | 2002 | cond-mat/0210250 |
| — | ambient | — | resistivity | — | 2000 | cond-mat/0008116 |
Structure
- Crystal structure
- rock-salt structure
Superconducting parameters
- Hc2
- 1.5 T (at 4.2 K)
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- Si/SiO_2 wafer
- Pressure type
- none