Tc max
5.6 K
Tc ambient
5.5 K
arXiv year
1999
Papers
81
Tc exp.
5.6 K
Tc theo.
17.0 K
Evidence
experimental
Tc max measured at thin_film, resistivity, arXiv:1903.05009, confirmed by 3 papers
Evidence (135 records from 81 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 17.0 | — | — | — | — | 2025 | — | 2503.03559 |
| 16.0 | — | — | — | — | 2025 | — | 2503.03559 |
| 5.7 | ambient | thin_film | resistivity | — | 2025 | T1 |
Structure
- Crystal structure
- cfc cubic
- Space group
- I4/mmm
- Lattice a (Å)
- 4.200
Superconducting parameters
- Pairing symmetry
- s-wave
- Gap structure
- full_gap
- Hc2
- 8.5 T (1.8 K, perpendicular magnetic field)
- λ_eph (e–ph coupling)
- —
Competing orders
- ρ(T) exponent
- 1.00
Samples & pressure
- Sample form
- thin_film
- Substrate
- silicon-(100)
- Pressure type
- none
- Doping type
- none