Tc max
17.0 K
Tc ambient
16.8 K
arXiv year
1987
Papers
35
Tc exp.
17.0 K
Tc theo.
20.5 K
Evidence
experimental
Tc max measured at single_crystal, susceptibility, DOI: 10.1103/PhysRevB.78.140507, confirmed by 2 papers
Evidence (42 records from 35 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 20.5 | — | — | — | — | 2026 | T2 | 2603.05123 |
| 17.1 | — | single_crystal | ARPES | — | 2000 | T1 | DOI: 10.1103/PhysRevLett.85.3930 |
| 17.0 | — | single_crystal | susceptibility | — | 2008 | T1 | DOI: 10.1103/PhysRevB.78.140507 |
| 16.9 | — | polycrystal | resistivity | — | 2002 | T1 | cond-mat/0206091 |
| 16.8 | — | — | — | — | 2019 | T1 | 1904.08611 |
| 16.8 | ambient | single_crystal | — | — | 2019 | T1 | DOI: 10.1103/PhysRevB.99.134511 |
| 16.7 | — | single_crystal | susceptibility | — | 2013 | T1 | 1311.3420 |
| 16.5 | — | single_crystal | susceptibility | — | 2005 | T1 | cond-mat/0509244 |
| 16.5 | — | single_crystal | resistivity | — | 2000 | T1 | cond-mat/0001009 |
| 16.5 | — | polycrystal | susceptibility | — | 1987 | T1 | DOI: 10.1103/PhysRevB.36.8309 |
| 16.4 | — | single_crystal | susceptibility | s-wave | 2022 | T1 | DOI: 10.1103/PhysRevB.105.024506 |
| 16.4 | — | single_crystal | susceptibility | s-wave | 2021 | T1 | 2109.12446 |
| 16.3 | — | single_crystal | susceptibility | — | 1999 | T1 | DOI: 10.1103/PhysRevLett.82.5112 |
| 16.1 | — | thin_film | resistivity | s-wave | 2010 | T1 | DOI: 10.1103/PhysRevB.81.092509 |
| 16.1 | — | thin_film | resistivity | — | 2009 | T1 | 0907.3639 |
| 15.3 | — | thin_film | resistivity | — | 2020 | T1 | 2010.07312 |
| 15.3 | — | thin_film | resistivity | s-wave | 2010 | T1 | DOI: 10.1103/PhysRevB.81.092509 |
| 15.3 | — | thin_film | resistivity | — | 2009 | T1 | 0907.3639 |
| 15.0 | — | single_crystal | resistivity | — | 2000 | T1 | cond-mat/0011100 |
| 14.7 | — | single_crystal | susceptibility | s-wave | 2021 | T1 | 2109.12446 |
| 13.4 | — | thin_film | resistivity | — | 2020 | T1 | 2010.07312 |
| 13.0 | — | thin_film | resistivity | s-wave | 2025 | — | 2503.05124 |
| 13.0 | — | thin_film | susceptibility | — | 2024 | T1 | 2412.04159 |
| 12.5 | — | single_crystal | susceptibility | — | 2005 | T1 | cond-mat/0509244 |
| 5.5 | — | thin_film | STM | — | 2015 | T1 | DOI: 10.1103/PhysRevB.92.064514 |
| 1.2 | — | thin_film | resistivity | — | 2020 | T1 | 2010.07312 |
| 1.0 | — | — | — | — | 2021 | T1 | 2104.00694 |
| 0.9 | — | thin_film | resistivity | — | 2020 | T1 | 2010.07312 |
| — | — | — | — | — | 2022 | T1 | 2209.02721 |
| — | — | — | resistivity | — | 2018 | T1 | DOI: 10.1103/PhysRevLett.121.267004 |
| — | — | single_crystal | specific_heat | — | 2014 | T1 | 1409.8358 |
| — | — | single_crystal | specific_heat | s-wave | 2011 | T1 | 1110.0092 |
| — | — | single_crystal | susceptibility | — | 2010 | T1 | DOI: 10.1103/PhysRevB.82.180513 |
| — | — | single_crystal | STM | — | 2009 | T1 | 0903.3286 |
| — | — | single_crystal | STM | — | 2009 | T1 | DOI: 10.1103/PhysRevB.79.144522 |
| — | — | — | susceptibility | s-wave | 2009 | T1 | DOI: 10.1103/PhysRevB.80.014507 |
| — | — | single_crystal | resistivity | s-wave | 2008 | — | 0812.4715 |
| — | — | single_crystal | resistivity | — | 2004 | T1 | DOI: 10.1103/PhysRevB.69.134507 |
| — | — | single_crystal | susceptibility | — | 2003 | T1 | cond-mat/0309494 |
| — | — | single_crystal | neutron | s-wave | 2000 | T1 | DOI: 10.1103/PhysRevLett.85.5412 |
| — | — | single_crystal | neutron | — | 1997 | T1 | DOI: 10.1103/PhysRevLett.79.741 |
| — | — | single_crystal | susceptibility | — | 1995 | T1 | DOI: 10.1103/PhysRevB.52.7689 |
Structure
- Crystal structure
- A15
- Space group
- Pm3m (#223)
- Lattice a (Å)
- 4.720
Superconducting parameters
- Pairing symmetry
- s-wave
- Gap structure
- multi_gap
- Hc2
- 21.0 T (at low temperatures)
- λ_eph (e–ph coupling)
- 1.25
Samples & pressure
- Sample form
- single_crystal
- Substrate
- SiO2 on Si
- Pressure type
- none
- Doping type
- none