Tc max
3.0 K
Tc ambient
3.0 K
arXiv year
1993
Papers
1
Tc exp.
3.0 K
Tc theo.
—
Evidence
experimental
Tc max measured at thin_film, resistivity, DOI: 10.1103/PhysRevB.48.4168
Evidence (1 record from 1 paper)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 3.0 | — | thin_film | resistivity | — | 1993 | T1 | DOI: 10.1103/PhysRevB.48.4168 |
Structure
- Crystal structure
- A15
- Phase
- beta-W
Superconducting parameters
- Hc2
- 8.0 T (near Tc)
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- silicon
- Doping type
- isovalent
- Doping level
- 0.170