Tc max
12.0 K
Tc ambient
4.2 K
arXiv year
2008
Papers
5
Tc exp.
12.0 K
Tc theo.
—
Evidence
experimental
Tc max measured at single_crystal, resistivity, DOI: 10.1103/PhysRevB.100.235109, confirmed by 2 papers
Evidence (5 records from 5 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 12.0 | — | single_crystal | resistivity | — | 2019 | T1 | DOI: 10.1103/PhysRevB.100.235109 |
| 12.0 | — | — | resistivity | — | 2018 | T1 | 1811.12213 |
| 4.3 |
Structure
- Crystal structure
- hexagonal
- Space group
- P6m2 (#187)
Superconducting parameters
- Hc2
- 10.0 T
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- Si/SiO2