Tc max
1.4 K
Tc ambient
1.4 K
arXiv year
2012
Papers
6
Tc exp.
1.3 K
Tc theo.
—
Evidence
experimental
Tc max measured at single_crystal, susceptibility, arXiv:1202.4772, confirmed by 2 papers
Evidence (14 records from 6 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 1.4 | — | single_crystal | susceptibility | — | 2012 | T1 | 1202.4772 |
| 1.3 | — | single_crystal | specific_heat | — | 2012 | T1 | 1202.4772 |
| 1.3 | — | single_crystal | specific_heat | s-wave | 2012 | T1 | DOI: 10.1103/PhysRevB.85.214526 |
| 1.3 | — | single_crystal | susceptibility | — | 2026 | T1 | DOI: 10.1103/8jjw-4r71 |
| 1.3 | — | single_crystal | resistivity | — | 2012 | T1 | 1202.4772 |
| 1.3 | — | single_crystal | — | s-wave | 2012 | T1 | DOI: 10.1103/PhysRevB.85.214526 |
| 1.3 | — | single_crystal | susceptibility | — | 2012 | T1 | 1202.4772 |
| 1.3 | — | single_crystal | susceptibility, resistivity | s-wave | 2012 | T1 | DOI: 10.1103/PhysRevB.85.214526 |
| 1.0 | — | thin_film | resistivity | — | 2025 | T1 | DOI: 10.1103/PhysRevMaterials.9.034801 |
| 1.0 | — | thin_film | resistivity | — | 2024 | T1 | 2411.04871 |
| 0.9 | — | single_crystal | resistivity, specific_heat | p-wave | 2026 | T1 | 2601.07460 |
| 0.4 | — | single_crystal | susceptibility | — | 2012 | T1 | 1202.4772 |
| 0.4 | — | single_crystal | susceptibility | s-wave | 2012 | T1 | DOI: 10.1103/PhysRevB.85.214526 |
| — | — | single_crystal | muSR | p-wave | 2026 | T1 | 2601.07460 |
Structure
- Crystal structure
- orthorhombic
- Space group
- Cmcm
- Lattice a (Å)
- 4.554
- Lattice c (Å)
- 4.267
Superconducting parameters
- Hc2
- 0.0 T (out-of-plane)
- λ_eph (e–ph coupling)
- 0.51
Competing orders
- ρ(T) exponent
- 3.00
Samples & pressure
- Sample form
- single_crystal
- Substrate
- GaSb
- Pressure type
- none
- Doping type
- none