Tc max
9.2 K
Tc ambient
9.2 K
arXiv year
1986
Papers
5
Tc exp.
9.2 K
Tc theo.
10.9 K
Evidence
theoretical
Tc max measured at thin_film, DOI: 10.1103/PhysRevLett.57.3284
Evidence (16 records from 5 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 10.9 | ambient | — | — | — | 2022 | T3 | 2208.03021 |
| 10.8 | 1.0 | — | — | — | 2023 | T1 | DOI: 10.1103/PhysRevB.108.014501 |
| 10.8 | 1.0 |
Structure
- Crystal structure
- NaCl structure
- Space group
- Fm-3m
- Lattice a (Å)
- 0.450
Superconducting parameters
- Pairing symmetry
- s-wave
- λ_eph (e–ph coupling)
- 0.65
- ω_log
- 391 K
Samples & pressure
- Sample form
- thin_film
- Substrate
- silicon