ZrTe₃

chalcogenide · TiS3-type

ambient SCcompeting orderdisputed

Tc max

5.5 K

Tc ambient

5.5 K

arXiv year

2005

Papers

Tc exp.

5.2 K

Tc theo.

—

Evidence

experimental

Tc max measured at thin_film, resistivity, DOI: 10.1103/qc3p-g2y3, confirmed by 3 papers

Evidence (16 records from 9 papers)

the flat columns above are aggregates — each line here is one paper's claim

Tc (K)	P (GPa)	Sample	Method	Pairing	Year	Tier	Paper
5.5	—	thin_film	resistivity	—	2025	T1	DOI: 10.1103/qc3p-g2y3
5.2	ambient	polycrystal	—	—	2012	T1	1206.1700
5.2	—	polycrystal	—	—	2012	T1	1206.1716
5.0	—	thin_film	resistivity	—	2024	T1	DOI: 10.1103/PhysRevB.109.144513
4.2	—	thin_film	resistivity	—	2024	T1	DOI: 10.1103/PhysRevB.109.144513
4.0	ambient	single_crystal	resistivity	—	2013	T1	DOI: 10.1103/PhysRevB.87.024508
3.5	5.5	single_crystal	resistivity	—	2005	T1	DOI: 10.1103/PhysRevB.71.132508
3.2	—	single_crystal	resistivity	—	2025	T1	DOI: 10.1103/qc3p-g2y3
3.0	—	single_crystal	resistivity	—	2015	—	1502.02118
3.0	ambient	single_crystal	susceptibility, specific_heat	—	2013	T1	DOI: 10.1103/PhysRevB.87.024508
2.7	—	single_crystal	resistivity	—	2025	T1	DOI: 10.1103/qc3p-g2y3
2.0	—	single_crystal	resistivity	—	2019	T1	1902.08872
2.0	—	single_crystal	resistivity	—	2012	T1	DOI: 10.1103/PhysRevB.85.184513
1.6	—	single_crystal	resistivity	—	2024	T1	DOI: 10.1103/PhysRevB.109.144513
1.4	—	single_crystal	resistivity	—	2024	T1	DOI: 10.1103/PhysRevB.109.144513
1.2	—	single_crystal	specific_heat	—	2012	T1	DOI: 10.1103/PhysRevB.85.184513