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Enhanced superconductivity in PbTe-In hybrids

Zuhan Geng, Fangting Chen, Yichun Gao, Lining Yang, Yuhao Wang, Shuai Yang, Shan Zhang, Zonglin Li, Wenyu Song, Jiaye Xu, Zehao Yu, Ruidong Li, Zhaoyu Wang, Xiao Feng, Tiantian Wang, Yunyi Zang, Lin Li, Runan Shang, Qi-Kun Xue, Ke He, Hao Zhang

DOI 10.1103/8czc-tn4z · Physical Review Materials

T1

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Abstract

We report the realization of epitaxial indium thin films on PbTe nanowires. The film is continuous and forms an atomically sharp interface with PbTe. Tunneling devices reveal a hard superconducting gap. The gap size, 1.08–1.18 meV, is twice as large as bulk indium's (∼0.5 meV), due to the presence of PbTe. A similar enhancement is also observed in the critical temperature of In on a PbTe substrate. Subgap peaks appear at finite magnetic fields. The effective g factor (15–45) is notably enhanced compared to bare PbTe wires (<10) due to the presence of In, differing from Al hybrids. Josephson devices exhibit gate-tunable supercurrents. The PbTe-In hybrid enhances the properties of both the superconductivity of In and g factors of PbTe, and thus may enable exotic phases of matter such as topological superconductivity.

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FormulaReported Tc (K)Pressure (GPa)Type
In

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6Pressure not reportedonset
In

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3.8Pressure not reportedonset
In

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3.4Pressure not reportedunknown

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