Quasiballistic (In,Ga)As Josephson field-effect transistor with molybdenum electrodes
Louise Olausson, Erik Lind
DOI 10.1103/8n63-zfnr · Physical Review Applied
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Abstract
Gate-tunable Josephson junctions with molybdenum superconducting contacts are reported. The Josephson field-effect transistors are based on an (In,Ga)As quantum well heterostructure with Mo contacts deposited on a layer of heavily doped (In,Ga)As by HCl cleaning and sputtering. We reproduced the measured data using a quasiballistic model that captures the gate dependence of the critical current and considers contributions from both Andreev states in the discrete spectrum and leaky states in the continuous spectrum. We report the observation of multiple Andreev reflections (MARs) up to the fourth order, and the measured temperature dependence of the MAR features is consistent with a model describing an effective induced superconducting gap beneath the contacts, approximately 55% of the gap in the Mo. The transistors are integrated into an rf-compatible geometry with Si3N4 spacers, enabling future implementation of highly scaled, compact, quantum-limited cryogenic amplifiers.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Mo Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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