Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon
A. Hertel, L.O. Andersen, D.M.T. van Zanten, M. Eichinger, P. Scarlino, S. Yadav, J. Karthik, S. Gronin, G.C. Gardner, M.J. Manfra, C.M. Marcus, K.D. Petersson
DOI 10.1103/PhysRevApplied.16.044015 · Physical Review Applied
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Abstract
We present a superconductor-semiconductor materials system that is both scalable and monolithically integrated on a silicon substrate. It uses selective-area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high-resistivity silicon substrate. We characterize the electrical properties of this materials system at millikelvin temperatures and observe a high average field-effect mobility of μ≈3200cm2/Vs for the InAs channel and a hard induced superconducting gap. Josephson junctions exhibit a high interface transmission, T≈0.75, a gate-voltage-tunable switching current with a product of critical current and normal state resistance, ICRN≈83μV, and signatures of multiple Andreev reflections. These results pave the way for scalable and high-coherence gate-voltage-tunable transmon devices and other superconductor-semiconductor hybrids fabricated directly on silicon.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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