Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon
Albert Hertel, Michaela Eichinger, Laurits O. Andersen, David M.T. van Zanten, Sangeeth Kallatt, Pasquale Scarlino, Anders Kringhøj, José M. Chavez-Garcia, Geoffrey C. Gardner, Sergei Gronin, Michael J. Manfra, András Gyenis, Morten Kjaergaard, Charles M. Marcus, Karl D. Petersson
DOI 10.1103/PhysRevApplied.18.034042 · Physical Review Applied
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Abstract
We present a gate-voltage-tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high-resistivity silicon substrate using III-V buffer layers. We show that low-loss superconducting resonators with an internal quality of 2×105 can readily be realized using these substrates after the removal of buffer layers. We demonstrate coherent control and readout of a gatemon device with a relaxation time, T1≈700ns, and dephasing times, T2∗≈20ns and T2,echo≈1.3μs. Further, we infer a high junction transparency of 0.4–0.9 from an analysis of the qubit anharmonicity.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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