Gate-Tunable Superconductor-Semiconductor Parametric Amplifier
D. Phan, P. Falthansl-Scheinecker, U. Mishra, W.M. Strickland, D. Langone, J. Shabani, A.P. Higginbotham
DOI 10.1103/PhysRevApplied.19.064032 · Physical Review Applied
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Abstract
We build a parametric amplifier with a Josephson field-effect transistor (JoFET) as the active element. The resonant frequency of the device is field-effect tunable over a range of 2GHz. The JoFET amplifier has 20dB of gain, 4MHz of instantaneous bandwidth, and a 1-dB compression point of −125.5dBm when operated at a fixed resonance frequency.
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