Temporal evolution of electric transport properties of YBa2Cu3O7−δ Josephson junctions produced by focused-helium-ion-beam irradiation
M. Karrer, K. Wurster, J. Linek, M. Meichsner, R. Kleiner, E. Goldobin, D. Koelle
DOI 10.1103/PhysRevApplied.21.014065 · Physical Review Applied
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Abstract
We examined the temporal evolution of Josephson and resistive barriers created by a 30-keV focused helium ion beam in microbridges of epitaxially grown single-crystal YBa2Cu3O7−δ thin films. Repeated electric transport measurements at 4.2 K within 300 days after irradiation revealed an increase in the critical current density jc for devices stored at room temperature under nitrogen atmosphere. This behavior can be described by a diffusion-based model of displaced chain oxygen moving back to original lattice sites, thus healing the barrier and partially restoring critical current. We find that jc∝exp(−t/τ) with time t. The relaxation time τ increases exponentially with helium irradiation dose and can exceed several hundred days for high-quality Josephson junctions. To achieve higher diffusion rates and thus shorter relaxation times, we annealed some devices in different oxygen partial pressures, right after irradiation. Within a week, those junctions relaxed to a quasistable state, making this a feasible option to achieve temporal stability of device parameters.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| YBa2Cu3O7-δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 89 | Pressure not reported | unknown |
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