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Superconducting phase diagrams of S-doped 2H−TaSe2 under hydrostatic pressure

Shuxiang Xu, Ziyi Liu, Pengtao Yang, Keyu Chen, Jianping Sun, Jianhong Dai, Yunyu Yin, Fang Hong, Xiaohui Yu, Mianqi Xue, Jun Gouchi, Yoshiya Uwatoko, Bosen Wang, Jinguang Cheng

DOI 10.1103/PhysRevB.102.184511 · Physical Review B

T1

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Abstract

We report the hydrostatic pressure effect on the charge density wave (CDW) and superconductivity (SC) of single-crystal 2H−TaSe2−xSx by measuring the electrical resistivity and ac magnetic susceptibility under various pressures up to 12.5 GPa. Different from the previously reported phase diagrams of CDW and SC as a function of the Se/S substitution and/or the uniaxial pressure, the superconducting transition temperature (Tc) was found to increase monotonously with increasing the pressure at first and then reaches a maximum constant above a critical pressure Pc. The maximal Tcmax is nearly two times higher than the optimal ones via the S doping and decreases with further increasing the S-doping level. High-pressure ac magnetic susceptibility demonstrates that the superconducting volume quickly increases along with the gradual suppression of CDW and reaches nearly 1 above Pc, which provides clear evidences for pressure-induced crossover from CDW to bulk SC. High-pressure x-ray diffraction proves that there is no structural phase transition in 2H−TaSe2 up to 20 GPa; although the dependence of Tc on the volume shows distinct behaviors at the initial S doping and the applied physical pressure, they both collapse into a universal curve upon the further volume shrinkage. This indicates that both physical pressure and the S-doping-induced chemical pressure can melt CDW and enhance SC through lattice contraction consistently. In comparison with the effects of hydrostatic pressure, the S doping can destruct the CDW ground state faster due to the presence of chemical disorders, which also restrict the further enhancement of Tc after the collapse of CDW.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
TaSe2

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0.14Pressure unresolvedunknown
TaSe2

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2.8Pressure unresolvedonset
TaSe1.8S0.2

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—Pressure unresolvedunknown
TaSeS

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4.2Pressure unresolvedunknown
TaSe2-xSx

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4.2Pressure unresolvedunknown
TaSe2

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8.223 GPaunknown

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