Vertical position of Sr dopants in the SrxBi2Se3 superconductor
You-Ron Lin (林又容), Mahasweta Bagchi, Serguei Soubatch, Tien-Lin Lee (李天麟), Jens Brede, François C. Bocquet, Christian Kumpf, Yoichi Ando, F. Stefan Tautz
DOI 10.1103/PhysRevB.104.054506 · Physical Review B
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Abstract
The discovery of topological superconductivity in doped Bi2Se3 made this class of materials highly important for the field of condensed matter physics. However, the structural origin of the superconducting state remained elusive, despite being investigated intensively in recent years. We use scanning tunneling microscopy and the normal incidence x-ray standing wave (NIXSW) technique in order to determine the vertical position of the dopants—one of the key parameters for understanding topological superconductivity in this material— for the case of SrxBi2Se3. In particular, we analyze the NIXSW data in consideration of the inelastic mean free path of the photoemitted electrons, which allows us to distinguish between symmetry-equivalent sites. We find that Sr atoms are not situated inside the van der Waals gap between the Bi2Se3 quintuple layers but rather in the quintuple layer close to the outer Se planes.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| SrxBi2Se3 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 2.7 | Pressure not reported | onset |
| SrxBi2Se3 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 2.7 | Pressure not reported | onset |
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