Microwave response of NbSe2 van der Waals Josephson junctions

Shixian Chen; Wanghao Tian; Zuyu Xu; Ping Zhang; Hongmei Du; Zihan Wei; Dingding Li; Yangyang Lv; Hancong Sun; Yong-Lei Wang; Dieter Koelle; Reinhold Kleiner; Huabing Wang; Peiheng Wu

doi:10.1103/PhysRevB.104.214512

Microwave response of NbSe2 van der Waals Josephson junctions

Shixian Chen, Wanghao Tian, Zuyu Xu, Ping Zhang, Hongmei Du, Zihan Wei, Dingding Li, Yangyang Lv, Hancong Sun, Yong-Lei Wang, Dieter Koelle, Reinhold Kleiner, Huabing Wang, Peiheng Wu

DOI 10.1103/PhysRevB.104.214512 · Physical Review B

T1

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Abstract

van der Waals Josephson junctions utilize the interface between two superconducting NbSe2 crystal flakes as a tunnel barrier. We fabricate such junctions by a dry-transfer procedure and characterize them by electric transport experiments at various temperatures and under microwave irradiation at frequencies up to 224 GHz. We observe integer Shapiro steps in the current-voltage characteristics indicating a sinusoidal Josephson current-phase relation and the possibility to use this kind of junction even in the terahertz frequency range.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
NbSe2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	5.5	Pressure not reported	onset
NbSe2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	5	Pressure not reported	zero_resistance
NbSe2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	7	Pressure not reported	unknown