Electric field modulated 1T′−MoS2-based pure crossed Andreev reflection and nonlocal tunneling spin-valley locking Hall effect

Abstract

In recent years, pure crossed Andreev reflection has attracted much attention due to its scientific significance and potential applications. Here, we investigate the crossed Andreev reflection in a monolayer 1T′−MoS2-based normal metal-superconductor-normal metal junction by solving the Dirac-Bogoliubov-de Gennes equation. It is found that an electric field can be used to modulate the pure crossed Andreev reflection without the local Andreev reflection and the elastic cotunneling when the signs of Fermi energies in two normal regions are opposite. The maximum pure crossed Andreev reflection conductance increases as the incident energy rises. Interestingly, the distribution of transmitted angle of hole exhibits spin-valley locking and direction separation, resulting from the tilted and anisotropic band structure, which resembles the Hall effect and is referred to as the nonlocal tunneling spin-valley locking Hall effect. Furthermore, the nonlocal tunneling spin-valley locking Hall conductance and the corresponding Hall angle are calculated as functions of the junction length and electric field. A giant spin-valley locking Hall angle, ranging from approximately 2 to 45, is found by selecting appropriate physical parameters in the absence of Berry curvature. Our findings can be utilized to manipulate the spin-valley locking entangled state, especially involving in the Cooper pair splitter, and more generally, offering potential applications in both spintronics and valleytronics.

Source-reported materials — not catalogue approval

Similar papers