Carrier-concentration dependence of critical superconducting current induced by the proximity effect in silicon
T. Nishino, E. Yamada, U. Kawabe
DOI 10.1103/PhysRevB.33.2042 · Physical Review B
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Abstract
The carrier-concentration dependence of the critical superconducting current induced by the proximity effect in a heavily B-doped Si has been studied experimentally. It is found that the critical current which flows through the p-type-Si–coupled junction can be controlled both by the acceptor concentration and by the induced carrier concentration by the electric potential applied to the gate electrode.
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