Response of Josephson junctions to far-infrared radiation near their plasma resonance frequencies
Qing Hu, C. J. Lobb, M. Tinkham
DOI 10.1103/PhysRevB.35.1687 · Physical Review B
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Abstract
We have studied the response of several Nb–a-Si–Nb junctions to far-infrared laser radiation at a frequency within 10% of their plasma frequencies ωp, and have depressed ωp by similar amounts with a magnetic field. Because of the complexity of the response, the dc I-V characteristics of the irradiated junctions show striking qualitative differences even for these small differences in ωp. We can accurately reproduce these characteristics with analog simulations including appropriate noise levels, allowing us to determine the plasma frequency within a few-percent accuracy.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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