Theory of electronic, vibrational, and superconducting properties of fcc silicon
Amy Y. Liu, K. J. Chang, Marvin L. Cohen
DOI 10.1103/PhysRevB.37.6344 · Physical Review B
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Abstract
We present a theoretical calculation of the properties of the fcc, high-pressure structural phase of Si. The electronic and phonon properties have been studied and we predict the system to be a free-electron-like metal with a very stiff lattice. In addition, we estimate the superconducting transition temperature to be approximately 2 K based on calculations of the electron-phonon coupling constant λ. Comparisons are made with the results of previous calculations for Al.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Si Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 2 | Pressure not reported | unknown |
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