Pressure-induced superconductivity in high-pressure phases of Si
T. H. Lin, W. Y. Dong, K. J. Dunn, C. N. J. Wagner, F. P. Bundy
DOI 10.1103/PhysRevB.33.7820 · Physical Review B
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Abstract
The electrical behavior of Si was studied for pressures up to 43 GPa and temperatures down to 2 K using a sintered-diamond-compact anvil cryogenic clamp press. Two types of samples, amorphous thin-film Si and semiconductor-quality crystalline Si, were used. The superconducting transition temperatures Tc for high-pressure phases of the amorphous Si are about 3 K higher than those of the cystalline Si. The Tc decreases monotonically for pressures higher than 25 GPa. No upturn in Tc around 25 GPa as predicted theoretically for the simple-hexagonal phase was observed.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Si Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 6.8 | 12 GPa | midpoint |
| Si Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 8.4 | 21 GPa | midpoint |
| Si Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3.9 | 12 GPa | midpoint |
| Si Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 5.2 | 17 GPa | midpoint |
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