Superconducting Ga-overdoped Ge layers capped with SiO2: Structural and transport investigations

Abstract

Superconducting Ga-rich layers in Ge are fabricated by Ga implantation through a thin SiO2 cover layer. After annealing in a certain temperature window, Ga accumulation at the SiO2/Ge interface is observed. However, no Ga-containing crystalline phases are identified. Thus it is suggested that the volatile Ga is stabilized in an amorphous mixture of all elements available at the interface. Electrical transport measurements reveal p-type metallic conductivity and superconducting transition. The superconducting properties of the samples with high Ga concentration at the interface change dramatically with etching the amorphous surface layer. A critical temperature of 6 K is measured before, whereas after etching it drops below 1 K. Therefore, one can conclude that the superconducting transport is based on two different layers: a Ga-rich amorphous phase at the interface and a heavily Ga-doped Ge layer. Finally, the comparison of the transport properties of Ga-rich Ge with those of Si demonstrates distinct differences between the interface layers and even the deeper-lying doped regions.

Source-reported materials — not catalogue approval

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