Pressure-Dependent Metallic and Superconducting Phases in a Germanium Artificial Metal

H. B. Cui; D. Graf; J. S. Brooks; H. Kobayashi

doi:10.1103/PhysRevLett.102.237001

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Pressure-Dependent Metallic and Superconducting Phases in a Germanium Artificial Metal

H. B. Cui, D. Graf, J. S. Brooks, H. Kobayashi

DOI 10.1103/PhysRevLett.102.237001 · Physical Review Letters

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Abstract

Germanium (Ge) becomes an “artificial metal” and a superconductor (Tc∼5 K) above the pressure-induced semiconductor-(diamond structure)-to-metal (β-Sn structure) transition at 10 GPa. We report single crystal resistance studies of the pressure-dependent metallic and metastable phases in the range 2.6 to 23 GPa, and show for a controlled pressure release, Ge is a metastable metal below 3 GPa. We find Ge has a superconducting upper critical field of 300 Oe (at 10.7 GPa and 1.8 K), above which a positive magnetoresistance consistent with that of a compensated closed orbit metal is observed.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Ge Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	5	10.1 GPa	onset
Ge Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	5	8.7 GPa	onset
Ge Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	5.35	11.5 GPa	unknown