Pressure-induced transformations and superconductivity of amorphous germanium
O. I. Barkalov, V. G. Tissen, P. F. McMillan, M. Wilson, A. Sella, M. V. Nefedova
DOI 10.1103/PhysRevB.82.020507 · Physical Review B
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Abstract
The effect of pressure on amorphous Ge was probed by Raman spectroscopy combined with molecular-dynamics simulations. A large jump occurs in the principal peak position due to nearest-neighbor Ge-Ge vibrations at 11–12 GPa and 7–5.5 GPa, respectively, during increasing/decreasing pressure due to a polyamorphic transition occurring between the low-density amorphous semiconductor and a metallic high-density polyamorph (HDA). We measured the superconducting transition temperature (Tc) using magnetic susceptibility measurements in the diamond anvil cell and determined that Tc for the high-density HDA polyamorph was higher than that for the β-Sn structured Ge-II crystalline phase.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Ge Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 6 | 9 GPa | onset |
| Ge Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3.4 | 26 GPa | onset |
| Ge Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 5.5 | 7 GPa | unknown |
| Ge Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 4.8 | 10 GPa | unknown |
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