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Approaching the Mott-Hubbard insulator in the 85-K superconductor Bi2(Sr,Ca)3Cu2O8+d by doping with Tm

J. Clayhold, S. J. Hagen, N. P. Ong, J. M. Tarascon, P. Barboux

DOI 10.1103/PhysRevB.39.7320 · Physical Review B

T1

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Abstract

As x increases in Bi4Sr3Ca3−xTmxCu4O16+y the Hall carrier density nH decreases linearly. The variation is consistent with Mott-Hubbard behavior, but in conflict with band-structure results which ignore correlations. We find that the variation of Tc vs nH is nonmonotonic. The source of the large carrier population (0.4/Cu) in the undoped (x=0) compound is discussed.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Bi2(Sr,Ca)3Cu2O8+d

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85Pressure not reportedunknown
Bi4Sr3Ca3-xTmxCu4O16+y

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

85Pressure not reportedunknown

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