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Superconducting phases of Bi and Ga induced by deposition on a Ni sublayer

J. S. Moodera, R. Meservey

DOI 10.1103/PhysRevB.42.179 · Physical Review B

T1

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Abstract

Thin films of Bi and Ga deposited at 300 K on thin Ni underlayers are strongly coupled superconductors at liquid-helium temperature. A layer of 0.1–5.0 nm of Ni apparently seeds a superconducting phase in each of these metals. For Bi films Tc≤4 K, with an energy gap 2Δ≤1.30 meV; for Ga films Tc≤7 K and 2Δ≤2.30 meV. For both elements 2Δ/kTc≊4.2. The superconductivity of the Bi film was not confined to the interface, but extended throughout the film up to thicknesses of at least 40 nm, as was shown by tunneling studies on each surface of the film. X-ray diffraction shows that the Bi films grow pseudomorphically as an fcc phase with the lattice parameter of 5.71 Å, in contrast to the orthorhombic structure of bulk Bi. Upper critical fields were measured as a function of temperature and were several teslas. Ga films with or without seeding with Ni show only a disordered structure by x-ray diffraction. Electron-spin-polarization tunneling studies indicate that the Ni underlayers up to a thickness of about 2.0 nm are not ferromagnetic.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Bi

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4Pressure not reportedonset
Bi

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

4Pressure not reportedonset
Ga

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

7Pressure not reportedonset
Bi3Ni

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown
BiNi

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown

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