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Dependence of the electron-inelastic-scattering rate on disorder and temperature in a strongly disordered superconductor

Deuk Soo Pyun, Thomas R. Lemberger

DOI 10.1103/PhysRevB.44.7555 · Physical Review B

T1

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Abstract

The electron-inelastic-scattering rate, 1/τin, is studied in superconducting amorphous-composite indium oxide films over substantial ranges of resistivity ρ4.2 (1.4≤ρ4.2≤9.8 mΩ cm), sheet resistance R□ (0.17≤R□≤1.8 kΩ), and reduced temperature T/Tco (0.17≤T/Tco≤0.6), using an electron tunneling technique. 1/τin(T) is obtained by a phenomenological analysis of the data. The main result is that 1/τin≊2.8×1010 s−1[ρ4.2 (mΩ cm) Tco (K)]3/2(T/Tco)3. That 1/τin∝ρ4.23/2, as opposed to 1/τin∝R□, indicates the films are three dimensional (3D) rather than 2D for inelastic scattering. A recent theory explains this result as inelastic electron-phonon scattering that is enhanced by disorder that is strong enough to suppress the normal-state density of states at the Fermi energy significantly.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
InOx

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1.37Pressure not reportedunknown
InOx

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2.2Pressure not reportedunknown
InOx

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2.38Pressure not reportedunknown
InOx

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2.6Pressure not reportedunknown
InOx

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2.95Pressure not reportedunknown
InOx

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3.28Pressure not reportedunknown
InOx

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3.37Pressure not reportedunknown
InOx

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3.77Pressure not reportedunknown

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