Scaling magnetoresistance induced by superconducting contacts in n-type GaAs
R. G. Mani, L. Ghenim, T. N. Theis
DOI 10.1103/PhysRevB.45.12098 · Physical Review B
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Abstract
A low-temperature (T<4.2 K) transport study of n-type doped (≃1019 cm−3) bulk GaAs reveals an enhancement of the electrical resistance, ΔR/R≃10−3, below a critical temperature, Tc=3.4 K, at low magnetic fields, B<30 mT, when superconducting In point contacts are used as the current and voltage probes. The resistance correction is shown to be a homogeneous function of the magnetic field, B, and the reduced temperature, τ=(Tc-T)/Tc, as [ΔR(T,B)/R]s=Aτκf(B/τβ) with κ=1.00±0.25, and β=1.00±0.33, in the vicinity of the critical point. The effect is attributed to proximity superconductivity in GaAs resulting from the use of superconducting point contacts.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| In Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3.4 | Pressure not reported | onset |
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