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Optimizing the superconducting transition temperature and upper critical field of Sn1−xInxTe

R. D. Zhong, J. A. Schneeloch, X. Y. Shi, Z. J. Xu, C. Zhang, J. M. Tranquada, Q. Li, G. D. Gu

DOI 10.1103/PhysRevB.88.020505 · Physical Review B

T1

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Abstract

Sn1−xInxTe is a possible candidate for topological superconductivity. Previous work has shown that substitution of In for Sn in the topological crystalline insulator SnTe results in superconductivity, with the transition temperature, Tc, growing with In concentration. We have performed a systematic investigation of Sn1−xInxTe for a broad range of x, synthesizing single crystals (by a modified floating-zone method) as well as polycrystalline samples. The samples have been characterized by x-ray diffraction, resistivity, and magnetization. For the single crystals, the maximum Tc is obtained at x=0.45 with a value of 4.5 K, as determined by the onset of diamagnetism.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Sn1-xInxTe

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4.5Pressure unresolvedonset
Sn0.55In0.45Te

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4.5Pressure unresolvedonset
Sn0.55In0.45Te

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4.5Pressure unresolvedonset
Sn0.6In0.4Te

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4.5Pressure unresolvedonset
Sn0.8In0.2Te

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2.7Pressure unresolvedonset
Sn0.7In0.3Te

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3.1Pressure unresolvedonset
Sn0.6In0.4Te

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4.2Pressure unresolvedonset

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