Electron and hole contributions to normal-state transport in the superconducting system Sn1−xInxTe
Cheng Zhang, Xu-Gang He, Hang Chi, Ruidan Zhong, Wei Ku, Genda Gu, J. M. Tranquada, Qiang Li
DOI 10.1103/PhysRevB.98.054503 · Physical Review B
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Abstract
Indium-doped SnTe has been of interest because the system can exhibit both topological surface states and bulk superconductivity. While the enhancement of the superconducting transition temperature is established, the character of the electronic states induced by indium doping remains poorly understood. We report a study of magnetotransport in a series of Sn1−xInxTe single crystals with 0.1≤x≤0.45. From measurements of the Hall effect, we find that the dominant carrier type changes from holelike to electronlike at x∼0.25; one would expect electronlike carriers if the In ions have a valence of +3. For single crystals with x=0.45, corresponding to the highest superconducting transition temperature, pronounced Shubnikov–de Haas oscillations are observed in the normal state. In measurements of magnetoresistance, we find evidence for weak antilocalization (WAL). We attribute both the quantum oscillations and the WAL to bulk Dirac-like hole pockets, previously observed in photoemission studies, which coexist with the dominant electronlike carriers.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Sn1-xInxTe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 4.5 | Pressure not reported | onset |
| Sn1-xInxTe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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