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Superconductivity, pairing symmetry, and disorder in the doped topological insulator Sn1−xInxTe for x≥0.10

M. P. Smylie, H. Claus, W.-K. Kwok, E. R. Louden, M. R. Eskildsen, A. S. Sefat, R. D. Zhong, J. Schneeloch, G. D. Gu, E. Bokari, P. M. Niraula, A. Kayani, C. D. Dewhurst, A. Snezhko, U. Welp

DOI 10.1103/PhysRevB.97.024511 · Physical Review B

T1

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Abstract

The temperature dependence of the London penetration depth Δλ(T) in the superconducting doped topological crystalline insulator Sn1−xInxTe was measured down to 450 mK for two different doping levels, x≈0.45 (optimally doped) and x≈0.10 (underdoped), bookending the range of cubic phase in the compound. The results indicate no deviation from fully gapped BCS-like behavior, eliminating several candidate unconventional gap structures. Critical field values below 1 K and other superconducting parameters are also presented. The introduction of disorder by repeated particle irradiation with 5 MeV protons does not enhance Tc, indicating that ferroelectric interactions do not compete with superconductivity.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Sn1-xInxTe

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4.5Pressure not reportedonset
Sn0.55In0.45Te

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4.5Pressure not reportedonset
Sn0.9In0.1Te

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1.2Pressure not reportedonset
CuxBi2Se3

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3.5Pressure not reportedunknown
NbxBi2Se3

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3.4Pressure not reportedunknown
SrxBi2Se3

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3Pressure not reportedunknown

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