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Enhanced superconducting pairing interaction in indium-doped tin telluride

A. S. Erickson, J.-H. Chu, M. F. Toney, T. H. Geballe, I. R. Fisher

DOI 10.1103/PhysRevB.79.024520 · Physical Review B

T1

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Abstract

The ferroelectric degenerate semiconductor Sn1−δTe exhibits superconductivity with critical temperatures, Tc, of up to 0.3 K for hole densities of order 1021 cm−3. When doped on the tin site with greater than xc=1.7(3)% indium atoms, however, superconductivity is observed up to 2 K, though the carrier density does not change significantly. We present specific-heat data showing that a stronger pairing interaction is present for x>xc than for x<xc. By examining the effect of In dopant atoms on both Tc and the temperature of the ferroelectric structural phase transition, TSPT, we show that phonon modes related to this transition are not responsible for this Tc enhancement, and discuss a plausible candidate based on negative U pairing associated with mixed valency on the indium impurity sites.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Sn1-δTe

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0.3Pressure not reportedunknown
Sn1-δ-xInxTe

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2Pressure not reportedunknown
Pb1-xTlxTe

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—Pressure not reportedunknown
BaPb1-xBixO3

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—Pressure not reportedunknown
Sn0.995-xInxTe

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0.8Pressure not reportedmidpoint
Sn0.995-xInxTe

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0.8Pressure not reportedonset

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