Molecular beam epitaxy of superconducting Sn1−xInxTe thin films
M. Masuko, R. Yoshimi, A. Tsukazaki, M. Kawamura, K. S. Takahashi, M. Kawasaki, Y. Tokura
DOI 10.1103/PhysRevMaterials.4.091202 · Physical Review Materials
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Abstract
We report a systematic study on the growth conditions of Sn1−xInxTe thin films by molecular beam epitaxy for maximization of superconducting transition temperature Tc. Careful tuning of the flux ratios of Sn, In, and Te enables us to find an optimum condition for substituting rich In content (x=0.66) into the Sn site in a single phase of Sn1−xInxTe beyond the bulk solubility limit at ambient pressure (x=0.5). Tc shows a dome-shaped dependence on In content x with the highest Tc=4.20K at x=0.55, being consistent to that reported for bulk crystals. The well-regulated Sn1−xInxTe films can be a useful platform to study possible topological superconductivity by integrating them into the state-of-the-art junctions and/or proximity-coupled devices.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Sn1-xInxTe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 4.2 | Pressure not reported | zero_resistance |
| Sn0.45In0.55Te Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 4.2 | Pressure not reported | zero_resistance |
| Sn0.6In0.4Te Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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