Superconductivity in Sn1−xInxTe thin films grown by molecular beam epitaxy
Andrea Bliesener, Junya Feng, A. A. Taskin, Yoichi Ando
DOI 10.1103/PhysRevMaterials.3.101201 · Physical Review Materials
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Abstract
The superconductor Sn1−xInxTe is derived from the topological crystalline insulator SnTe and is a candidate topological superconductor. So far, high-quality thin films of this material have not been available, even though such samples would be useful for addressing the nature of its superconductivity. Here we report the successful molecular beam epitaxy growth of superconducting Sn1−xInxTe films by using Bi2Te3 as a buffer layer. The data obtained from tunnel junctions made on such films show the appearance of two superconducting gaps, which points to the coexistence of bulk and surface superconductivity. Given the spin-momentum locking of the surface states, the surface superconductivity is expected to be topological with an effective p-wave character. Since the topological surface states of SnTe consist of four Dirac cones, this platform offers an interesting playground for studying topological surface superconductivity with additional degrees of freedom.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Sn1-xInxTe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 2 | Pressure not reported | midpoint |
| Sn0.86In0.14Te Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 0.96 | Pressure not reported | midpoint |
| Sn1-xInxTe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 0.95 | Pressure not reported | unknown |
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