Evidence of indium impurity band in superconducting (Sn,In)Te thin films
Jiashu Wang, Trisha Musall, Bo-An Chen, Marie Gerges, Logan Riney, Sylwia Ptasinska, Xinyu Liu, Badih A. Assaf
DOI 10.1103/PhysRevB.109.014513 · Physical Review B
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Abstract
Sn1−xInxTe has been synthesized and studied recently as a candidate topological superconductor. Its superconducting critical temperature increases with indium concentration. However, the role of indium in altering the normal-state band structure and generating superconductivity is not well understood. Here, we explore this question in Sn1−xInxTe (0<x<0.3) thin films, characterized by magnetotransport, infrared transmission, and photoemission spectroscopy measurement. We show that indium is forming an impurity band below the valence-band edge which pins the Fermi energy and effectively generates electron doping. An enhanced density of states due to this impurity band leads to the enhancement of Tc measured in multiple previous studies. The existence of the In impurity band and the role of In as a resonant impurity should be more carefully considered when discussing the topological nature of Sn1−xInxTe.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Sn1-xInxTe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3.5 | Pressure not reported | unknown |
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