Tailoring band structure and band filling in a simple cubic (IV, III)-VI superconductor
M. Kriener, M. Kamitani, T. Koretsune, R. Arita, Y. Taguchi, Y. Tokura
DOI 10.1103/PhysRevMaterials.2.044802 · Physical Review Materials
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Abstract
Superconductivity and its underlying mechanisms are one of the most active research fields in condensed-matter physics. An important question is how to enhance the transition temperature Tc of a superconductor. In this respect, the possibly positive role of valence-skipping elements in the pairing mechanism has been attracting considerable interest. Here we follow this pathway and successfully enhance Tc up to almost 6 K in the simple chalcogenide SnTe known as a topological crystalline insulator by doping the valence-skipping element In substitutionally for the Sn site and codoping Se for the Te site. A high-pressure synthesis method enabled us to form single-phase solid solutions Sn1−xInxTe1−ySey over a wide composition range while keeping the cubic structure necessary for the superconductivity. Our experimental results are supported by density-functional theory calculations which suggest that even higher Tc values would be possible if the required doping range was experimentally accessible.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Sn1-xInxTe1-ySey Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 6 | Pressure not reported | unknown |
| Sn1-δTe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 0.3 | Pressure not reported | unknown |
| InTe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3 | 3 GPa | unknown |
| Sn1-xInxTe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 4.75 | Pressure not reported | zero_resistance |
| Sn1-xInxTe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3.1 | Pressure not reported | zero_resistance |
| Sn1-xInxTe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 4.9 | Pressure not reported | zero_resistance |
| InSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 8.5 | Pressure not reported | unknown |
| Sn1-xInxTe1-ySey Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 5.7 | Pressure not reported | zero_resistance |
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