← Back to search

Transport properties in an InAs-inserted-channel In0.52Al0.48As/In0.53Ga0.47As heterostructure coupled superconducting junction

Junsaku Nitta, Tatsushi Akazaki, Hideaki Takayanagi, Kunihiro Arai

DOI 10.1103/PhysRevB.46.14286 · Physical Review B

T1

Active bibliographic source — not scientific approval

Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.

Abstract

Supercurrent is observed in a superconductor-semiconductor-superconductor (S-Sm-S) junction using a two-dimensional-electron-gas system in an InAs-inserted-channel In0.52Al0.48As/In0.53Ga0.47As heterostructure. The temperature dependence of the supercurrent cannot be explained by a simple exponential expression, but is here explained in terms of the clean-limit theory, taking account of the higher-order effect of the coherence length. The differential resistance of the junction shows clear subharmonic energy-gap structures due to multiple Andreev reflection since the phase coherence is maintained during the Andreev-reflection process. The Cooper pair transport explained by the clean-limit theory is attributed to the fact that the mean free path is longer than the coherence length and the length between the superconducting electrodes.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Nb

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown

Similar papers