van der Waals integration of superconducting nanostructures for anisotropized thermal relaxation
Wenlei Yin, Liang Ma, Qi Chen, Hao Wang, Mengfan Zhang, Yanqiu Guan, Huipeng Xia, Zhuolin Yang, Yue Fei, Xinyue Fu, Fei Zhou, Rui Yin, Lin Kang, Labao Zhang, Peiheng Wu
DOI 10.1103/nzjr-b9md · Physical Review B
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Abstract
Superconducting nanocircuits serve as an important platform for realizing quantum computing and quantum detecting. van der Waals integration (vdWI) has been reported in semiconductor devices due to its excellent electrical and thermal properties, but it is rarely reported in superconducting nanocircuits. In this work, we demonstrate a heterostructure through vdWI strategy to achieve the directional control of the thermal relaxation in a superconducting platform. The heterostructure is composed of NbN and MoS2 deposited by chemical and sputtering methods, respectively, thereby constructing a vdWI heterostructure with intrinsic anisotropic thermal conductivity. The simulated results indicate that the temperature uniformity of NbN superconducting nanocircuits was improved by the ultrahigh conductivity in plane of MoS2. The experimental results show that the superconductivity was improved as a transport characteristic curve. The improved superconductivity is benefited from the robustness to self-heating in a vdWI heterostructure, which is applicable to superconductor devices.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| NbN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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