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Excess voltage and resistance in superconductor-semiconductor junctions

A. W. Kleinsasser, A. Kastalsky

DOI 10.1103/PhysRevB.47.8361 · Physical Review B

T1

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Abstract

We report the observation of excess voltage in Nb-InxGa1−xAs superconductor-semiconductor contacts (at large biases, the voltage in the superconducting state significantly exceeds that in the normal state). In addition, we describe an unusual temperature-dependent large-bias dynamic resistance, including a sudden increase as temperature decreases through the superconducting transition, a steady decrease with decreasing temperature below Tc, and a second smaller increase as temperature decreases through the onset temperature for the recently reported proximity-effect-induced pair current [A. Kastalsky et al., Phys. Rev. Lett. 67, 3026 (1991)]. These phenomena are discussed in terms of the rapidly evolving theory of superconductor-normal contacts with finite interface transmittance.

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FormulaReported Tc (K)Pressure (GPa)Type
Nb

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9.2Pressure not reportedonset

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