Electric-field penetration into superconducting and normal-state surfaces of YBa2Cu3O7−x
W. G. Jenks, L. R. Testardi
DOI 10.1103/PhysRevB.48.12993 · Physical Review B
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Abstract
The penetration of a quasistatic electric field into epitaxial films of YBa2Cu3O7−x was studied around the films’ transition temperature. The electric-field penetration into an YBa2Cu3O7−x electrode was shown to vary by as much as 100 Å in the temperature regime 60<T<110 K. The direction of interfacial movement is reversed at Tc. The data are consistent with the continuous movement, with changing temperature, of an interface between two regions, one penetrated by the electric field and one devoid of electric field. The data indicate stronger delocalization forces along the c axis of the material in both the superconducting and normal state than could be expected from any conventional theory of metals. The effect of charge-carrier concentration on Tc was studied. The first and second derivatives of Tc with respect to surface carrier concentration were determined to be, respectively, near zero and negative.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| YBa2Cu3O7-x Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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