Observation of carrier-concentration-dependent reflectionless tunneling in a superconductor–two-dimensional-electron-gas–superconductor structure
S. J. M. Bakker, E. van der Drift, T. M. Klapwijk, H. M. Jaeger, S. Radelaar
DOI 10.1103/PhysRevB.49.13275 · Physical Review B
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Abstract
We report on the conductance of a short (<100 nm) silicon-based two-dimensional electron gas with superconducting source and drain electrodes. Below 1 K a zero-bias enhanced conductance is observed which depends on the carrier concentration in the electron gas. The data can qualitatively be understood as due to reflectionless tunneling; i.e., quantum-coherent-enhanced Andreev scattering.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| W-Ge Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 4 | Pressure not reported | onset |
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