Enhancement of superconductivity and observation of antilocalization in thin metal films by suppression of electron-interaction effects
E. G. Astrakharchik, C. J. Adkins
DOI 10.1103/PhysRevB.50.13622 · Physical Review B
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Abstract
We have studied superconductivity and temperature dependence of resistance in thin Ta films covered by a layer of anodic oxide. It was shown that deposition of a thick gold film on top of the oxide dielectric layer enhances the superconductivity of the thin film and changes the sign of the temperature dependence of resistance through changing the dominant quantum correction from electron-electron interaction to antilocalization. The results demonstrate that the proximity of a thick metal film, even without any electrical contact to the thin film, reduces the Coulomb interaction between conduction electrons in the thin film, thereby turning off most of the interaction quantum correction to conductivity. Consequently, the only quantum correction remaining is weak localization. This does not affect the superconductivity and has the antilocalization sign in Ta, as is expected for a metal of large atomic number.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Ta Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 4.4 | Pressure not reported | unknown |
| Ta Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 1.45 | Pressure not reported | midpoint |
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