Photon-activated switch behavior in the single-electron transistor with a superconducting island
J. M. Hergenrother, J. G. Lu, M. T. Tuominen, D. C. Ralph, M. Tinkham
DOI 10.1103/PhysRevB.51.9407 · Physical Review B
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Abstract
We show that the effects of photon-assisted tunneling in the single-electron transistor are dramatically enhanced if the mesoscopic island is superconducting. Many electrons can tunnel through the system for each absorbed photon as a result of an even-odd electron number effect in the superconducting island. For suitable bias, the device acts as a photon-activated switch from a low- to a high-current state, providing a sensitive mechanism for microwave detection. A simple model quantitatively describes this particular consequence and other less dramatic effects of microwave radiation.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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