Effect of gate voltage on critical current in controllable superconductor–normal-metal–superconductor Josephson junctions
Anatoly F. Volkov, Hideaki Takayanagi
DOI 10.1103/PhysRevB.53.15162 · Physical Review B
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Abstract
The effect of gate voltage on critical current Ic in a superconductor–normal-metal–superconductor (S-N-S) Josephson junction of a field-effect transistor was studied theoretically in the dirty limit. The analysis in the case of arbitrary gate width 2L1 compared to the spacing between the superconducting source and drain showed that two mechanisms are responsible for Ic decreasing with gate voltage. One is related to the decrease in coherence length LT1 in the region underneath the gate electrode; it dominates when L1≳LT1. The second mechanism is related to the additional scattering of carriers at a nonuniform potential arising due to a difference between the carrier density underneath the gate and that outside this region. This mechanism dominates when L1≪LT1. The calculated carrier density dependence of Ic was in good agreement with the experimental results. © 1996 The American Physical Society.
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