Magnetic-field-induced crossover from 2e to e periodicity in the superconducting single-electron transistor
J. G. Lu, J. M. Hergenrother, M. Tinkham
DOI 10.1103/PhysRevB.53.3543 · Physical Review B
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Abstract
We present extensive experimental data on the gate-charge-periodic current I(Qo) through a single-electron transistor as a function of the applied magnetic field. This device consists of a mesoscopic superconducting island which is coupled to two macroscopic superconducting leads through small tunnel junctions and to a capacitive gate. The behavior of the system exhibits two separate transitions as the magnetic field is increased. In the first, the I-Qo curves cross from 2e to e periodicity in Qo while two-electron tunneling is still the dominant charge transport mechanism. In a second transition that occurs at higher magnetic fields, single-electron tunneling becomes the dominant mechanism. This transition from two-electron to single-electron tunneling shifts the maxima of the I-Qo curves by e/2 in Qo, and results in a significant increase in the current magnitude. Both transitions can be understood by considering how superconductivity in the leads and the island is affected by an increasing magnetic field. © 1996 The American Physical Society.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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