Experimental evidence for parity-based 2e periodicity in a superconducting single-electron tunneling transistor
M. T. Tuominen, J. M. Hergenrother, T. S. Tighe, M. Tinkham
DOI 10.1103/PhysRevLett.69.1997 · Physical Review Letters
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Abstract
We present experimental current-voltage (I-V) measurements on an Al-Al2O3-Al single-electron tunneling transistor in the superconducting state. We observe a variety of features which result from Cooper-pair tunneling processes. At low bias voltages and low temperatures we find that the I-V curve is 2e periodic with respect to the gate-induced charge. Remarkably, this periodicity persists up to 300 mK, a behavior which we interpret as strong evidence of an incremental free energy which depends on whether the number of electrons on the superconducting island is even or odd.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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