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Overdoped regime of the high-Tc superconductor HgBa2CuO4+δ and the relation between normal and superconducting carrier densities

R. Puźniak, R. Usami, H. Yamauchi

DOI 10.1103/PhysRevB.53.86 · Physical Review B

T1

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Abstract

We have determined the ab-plane and c-axis components of penetration depth, λab and λc, and coherence length, ξab and ξc, for optimally doped (Tc=96 K) and overdoped HgBa2CuO4+δ (Tc=52 K). ξab, ξc, and λab increase, whereas λc decreases for the overdoped material in comparison to the optimally doped materials. Analysis of the data reveals that the increase of λab is caused by a suppression of the superconducting carrier density ns, and not an enhancement of the in-plane effective mass. The decrease of λc originates from an overcompensation in the suppression of ns by a strongly reduced effective mass along the c axis. © 1996 The American Physical Society.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
HgBa2CuO4+δ

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96Pressure not reportedunknown
HgBa2CuO4+δ

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52Pressure not reportedunknown
La2-xSrxCuO4

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—Pressure not reportedunknown
YBa2Cu3Oy

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—Pressure not reportedunknown
Tl2Ba2CuO6

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—Pressure not reportedunknown
YBa2Cu3O7

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—Pressure not reportedunknown
Y2Ba4Cu7O15

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown
YBa2Cu4O8

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—Pressure not reportedunknown
HgBa2Ca2Cu3O8+δ

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown

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