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Electron-electron interaction and normal-state transport in superconducting Ti-(Sn,Ge) alloys

W. B. Jian, C. Y. Wu, Y. L. Chuang, J. J. Lin

DOI 10.1103/PhysRevB.54.4289 · Physical Review B

T1

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Abstract

We have measured the resistivity as a function of temperature, ρ(T), of superconducting Ti1−x(Sn,Ge)x (0.03 ≲x≲ 0.12 for Ti-Sn and 0.03 ≲x≲ 0.07 for Ti-Ge) alloys below 25 K. These alloys are chosen because, upon dilute alloying, their impurity resistivities ρ0 vary readily from ≊55 to ≊150 μΩ cm, while their superconducting transition temperatures Tc increase moderately by a factor ∼60%. We find that the overall behavior of ρ(T) can be quantitatively interpreted in terms of the Boltzmann transport ATn (with A being a constant and n an exponent) plus a temperature-dependent contribution ΔρI arising from electron-electron interaction effects in the presence of disorder. Particularly, we observe a disorder dependence of ΔρI∼ρ05/2. We also observe that the screened Coulomb interaction parameter F̃, defined in the electron-electron interaction theory, becomes much more negative in samples with increasing Tc. © 1996 The American Physical Society.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Ti1-xSnx

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1Pressure unresolvedonset
Ti1-xSnx

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1.6Pressure unresolvedonset
Ti1-xGex

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0.9Pressure unresolvedonset
Ti1-xGex

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1.5Pressure unresolvedonset
Ti0.94Sn0.06

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1.47Pressure unresolvedonset
Ti0.94Ge0.06

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1.37Pressure unresolvedonset
Ti

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0.4Pressure not reportedunknown

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