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Pressure dependence of the superconducting transition temperature of HgBa2CaCu2O6+δ as a function of carrier concentration

Xiaojia Chen, Zhengkuan Jiao

DOI 10.1103/PhysRevB.56.6302 · Physical Review B

T1

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Abstract

A phenomenological analysis for the pressure-induced change of the hole concentration in the CuO2 layers (nH) is developed. This effect along with the pressure-induced change of the maximum value of critical temperature (Tc) enables us to take account of the external pressure dependence of Tc on different oxygen doping and different ambient Tc on the basis of the inverted parabolic relationship between Tc and nH. Detailed calculations for HgBa2CaCu2O6+δ (δ=0.08∼0.35) show that the Tc(P) curve with a saturation at large pressure in the nearly optimally doped but slightly underdoped material is located above the curve with a saturation at relatively low pressure in the slightly overdoped one, and that an experimental curve for the optimal doping lies between the two curves. It is found that the pressure coefficient (dTc/dP) decreases with increasing pressure and the initial pressure coefficient declines monotonously with the increase of hole concentration.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
HgBa2Ca2Cu3O8

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135Pressure unresolvedunknown
HgBa2Ca2Cu3O8

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164Pressure not reportedunknown
HgBa2CaCu2O6

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128Pressure unresolvedunknown
HgBa2CaCu2O6

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15429 GPaunknown
HgBa2CaCu2O6

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127Pressure unresolvedonset
HgBa2CaCu2O6

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1448 GPaonset
HgBa2CaCu2O6

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111Pressure unresolvedunknown
HgBa2CaCu2O6

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117Pressure unresolvedunknown

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